PART |
Description |
Maker |
M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位(8388608字由16位)的CMOS闪存 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
M5M29GT320VP-80 M5M29GB320VP-80 M5M29VT320VP M5M29 |
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
RENESAS[Renesas Electronics Corporation]
|
M5M44170-10S M5M44170-7S |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模,194,304位(262,144字由16位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MSM533232E |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit MASKROM
|
OKI[OKI electronic componets]
|
MSM533202E |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit MASKROM
|
OKI[OKI electronic componets]
|
MSM6684B |
4,194,304-word x 1-bit Serial Register(4M×1串行话音寄存
|
OKI SEMICONDUCTOR CO., LTD.
|
THMY644071BEG |
4/194/304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE 4,194,304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
|
MSC23436A-XXDS12 MSC23436A MSC23436A-XXBS12 |
4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE TYPE
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
M5M44170-10S M5M44170-7 M5M44170-8 M5M44170AJ M5M4 |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
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